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The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects
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Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and Al_xGa_1-xAs
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Defects in Silicon after Proton and Electron Irradiation
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Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors
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Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy
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A Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V Characteristics
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Transient Microwave Absorption Spectroscopy - Experimental Verification
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Photoluminescence and Optical Beam Induced Current Imaging of Defects
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Studies of Electron-Hole Recombination Processes...

Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1265-1270

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1265

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Online since:

January 1989

Authors:

Toshinobu Sugiyama, Yukari Ishikawa, Katsumi Tanimura, Yoshikazu Hayashi, Noriaki Itoh

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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