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The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects
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Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and Al_xGa_1-xAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Mössbauer Study of the Electronic and Vibrational...

Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and Al_xGa_1-xAs

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1245-1250

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1245

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Online since:

January 1989

Authors:

G. Langouche, H. Bemelmans, J. Odeurs, G. Borghs, M. de Potter, W. Deraedt, M. Van Rossum

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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