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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Lattice Location of Ion Implanted Dopants in GaAs...

Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1221-1226

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1221

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Online since:

January 1989

Authors:

S. Winter, S. Blässer, H. Hofsäss, S.G. Jahn, G. Lindner, E. Recknagel

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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