Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

1221-1226

DOI:

10.4028/www.scientific.net/MSF.38-41.1221

Citation:

S. Winter et al., "Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes", Materials Science Forum, Vols. 38-41, pp. 1221-1226, 1989

Online since:

January 1991

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$35.00

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