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The EPR Study of Inhomogeneous Deformations in Neutron-Irradiated Silicon
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Formation of Point Defect Clusters by Electron Irradiation in GaP, InAs and InP
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Formation of Defects in Ion Implanted Silicon during Rapid Isothermal Annealing
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Electron-Beam Epitaxy and Superdiffusion in Alloy Semiconductors by Electron-Beam Irradiation
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Positron Annihilation and Tem Study of Lattice Defects of Fusion Neutron Irradiated Silicon
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Neutrino-Recoil Experiments in Germanium
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Overlapping Deep Levels in Electron-Bombarded N-Type Silicon
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PAC-Study of Ternary Compound Formation by Ion Implantation
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Positron Annihilation and Tem Study of Lattice...

Positron Annihilation and Tem Study of Lattice Defects of Fusion Neutron Irradiated Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1199-1204

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1199

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Online since:

January 1989

Authors:

Ryuichiro Oshima, Motoyoshi Mori, Guo-Chun Hua, Shoichiro Honda, Michio Kiritani, Francisco Eiichi Fujita

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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