Paper Titles

IR Studies of Electron-Irradiated Aluminium-Doped Silicon
p.1169

The EPR Study of Inhomogeneous Deformations in Neutron-Irradiated Silicon
p.1175

Formation of Point Defect Clusters by Electron Irradiation in GaP, InAs and InP
p.1181

Formation of Defects in Ion Implanted Silicon during Rapid Isothermal Annealing
p.1187

Electron-Beam Epitaxy and Superdiffusion in Alloy Semiconductors by Electron-Beam Irradiation
p.1193

Positron Annihilation and Tem Study of Lattice Defects of Fusion Neutron Irradiated Silicon
p.1199

Neutrino-Recoil Experiments in Germanium
p.1205

Overlapping Deep Levels in Electron-Bombarded N-Type Silicon
p.1211

PAC-Study of Ternary Compound Formation by Ion Implantation
p.1217

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Electron-Beam Epitaxy and Superdiffusion in Alloy...

Electron-Beam Epitaxy and Superdiffusion in Alloy Semiconductors by Electron-Beam Irradiation

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1193-1198

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1193

Citation:

Cite this paper

Online since:

January 1989

Authors:

Takao Wada, Y. Maeda, T. Yamada, Soichiro Kojima, Masaya Ichimura

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: