Formation of Defects in Ion Implanted Silicon during Rapid Isothermal Annealing

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

1187-1192

DOI:

10.4028/www.scientific.net/MSF.38-41.1187

Citation:

R. Lenhard and S. Luby, "Formation of Defects in Ion Implanted Silicon during Rapid Isothermal Annealing", Materials Science Forum, Vols. 38-41, pp. 1187-1192, 1989

Online since:

January 1991

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