Paper Titles

Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors
p.1137

Magnetic Circular Dichroism Study of Electron-Irradiation Induced Defects in InP
p.1145

The Fate of Frenkel Pairs in Silicon and Germanium: What Do we Know about it?
p.1151

Positron Annihilation in Electron Irradiated Silicon
p.1157

The Influence of Germanium on the Formation and Annealing of Radiation Damage in Silicon
p.1163

IR Studies of Electron-Irradiated Aluminium-Doped Silicon
p.1169

The EPR Study of Inhomogeneous Deformations in Neutron-Irradiated Silicon
p.1175

Formation of Point Defect Clusters by Electron Irradiation in GaP, InAs and InP
p.1181

Formation of Defects in Ion Implanted Silicon during Rapid Isothermal Annealing
p.1187

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41The Influence of Germanium on the Formation and...

The Influence of Germanium on the Formation and Annealing of Radiation Damage in Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1163-1168

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1163

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Online since:

January 1989

Authors:

A.G. Italyantsev, Lyudmila I. Khirunenko, V.N. Mordkovich, E.E. Rubinova, E.M. Temper, V.A. Trunov, V.I. Shakhovtsov, L.I. Shpinar, V.I. Yashnik

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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