Paper Titles

Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy
p.1115

Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure
p.1121

Metastability of Antisite Defects in GaAs under Negative Electron Affinity
p.1125

Persistent Photoluminescence of DX-Centers in Ga_1-xAl_xAs:Si
p.1131

Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors
p.1137

Magnetic Circular Dichroism Study of Electron-Irradiation Induced Defects in InP
p.1145

The Fate of Frenkel Pairs in Silicon and Germanium: What Do we Know about it?
p.1151

Positron Annihilation in Electron Irradiated Silicon
p.1157

The Influence of Germanium on the Formation and Annealing of Radiation Damage in Silicon
p.1163

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Applications of Mössbauer Spectroscopy to...

Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1137-1144

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1137

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Online since:

January 1989

Authors:

Arne Nylandsted-Larsen, J.W. Petersen, G. Weyer

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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