For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Luminescence of Tellurium Related Deep Center in GaAs under Hydrostatic Pressure
p.1097
Pressure Dependence of the DX Center in Al0.35Ga0.65As:Te
p.1103
Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction
p.1109
Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy
p.1115
Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure
p.1121
Metastability of Antisite Defects in GaAs under Negative Electron Affinity
p.1125
Persistent Photoluminescence of DX-Centers in Ga1-xAlxAs:Si
p.1131
Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors
p.1137
Magnetic Circular Dichroism Study of Electron-Irradiation Induced Defects in InP
p.1145

Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure

Article Preview

Abstract:

You might also be interested in these eBooks
Defects in Semiconductors 15 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1121-1124

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1121

Citation:

Cite this paper

Online since:

January 1989

Authors:

R. Piotrzkowski

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.