Paper Titles

The Vacancy-Interstitial Model of DX Centers
p.1079

The Double-Faced DX Center in Al_xGa_1-xAs
p.1085

Long Lived Resonance States in Si-Doped AlGaAs
p.1091

Luminescence of Tellurium Related Deep Center in GaAs under Hydrostatic Pressure
p.1097

Pressure Dependence of the DX Center in Al_0.35Ga_0.65As:Te
p.1103

Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction
p.1109

Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy
p.1115

Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure
p.1121

Metastability of Antisite Defects in GaAs under Negative Electron Affinity
p.1125

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Pressure Dependence of the DX Center in...

Pressure Dependence of the DX Center in Al_0.35Ga_0.65As:Te

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1103-1108

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1103

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Online since:

January 1989

Authors:

Ming Fu Li, W. Shan, P.Y. Yu, W.L. Hansen, Eicke R. Weber, E. Bauser

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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