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Long Lived Resonance States in Si-Doped AlGaAs
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The Vacancy-Interstitial Model of DX Centers

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1079-1084

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1079

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Online since:

January 1989

Authors:

T.N. Morgan

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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