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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41The Deep Donor (DX Center) in GaAs: Determination...

The Deep Donor (DX Center) in GaAs: Determination of the Entropy Term in the Activation Energy

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1073-1078

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1073

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Online since:

January 1989

Authors:

T.N. Theis, T.N. Morgan, B.D. Parker, S.L. Wright

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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