Paper Titles

Isotope Studies of the Nature of IR-Active Center in c-Si:H(D)
p.1039

Thermal Stability of Acceptor-Hydrogen Pairs in Silicon
p.1045

Theory of Phosphorus-Hydrogen Complexes in Passivated Silicon
p.1051

Spontaneous Hydrogen Injection into Silicon
p.1057

Hydrogen Passivation of Donors and Acceptors in InP
p.1063

Two Electron D-State of DX-Centers
p.1067

The Deep Donor (DX Center) in GaAs: Determination of the Entropy Term in the Activation Energy
p.1073

The Vacancy-Interstitial Model of DX Centers
p.1079

The Double-Faced DX Center in Al_xGa_1-xAs
p.1085

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Hydrogen Passivation of Donors and Acceptors in...

Hydrogen Passivation of Donors and Acceptors in InP

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1063-1066

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1063

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Online since:

January 1989

Authors:

E.M. Omeljanovsky, A.V. Pakhomov, A.Y. Polyakov

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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