Paper Titles

Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies
p.1015

Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects
p.1021

Hydrogenation of GaAs during MBE Growth
p.1027

Identification of Microdefects Induced in Si after Hydrogen and Helium Plasma Treatments
p.1033

Isotope Studies of the Nature of IR-Active Center in c-Si:H(D)
p.1039

Thermal Stability of Acceptor-Hydrogen Pairs in Silicon
p.1045

Theory of Phosphorus-Hydrogen Complexes in Passivated Silicon
p.1051

Spontaneous Hydrogen Injection into Silicon
p.1057

Hydrogen Passivation of Donors and Acceptors in InP
p.1063

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Isotope Studies of the Nature of IR-Active Center...

Isotope Studies of the Nature of IR-Active Center in c-Si:H(D)

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1039-1044

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1039

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Online since:

January 1989

Authors:

B.N. Mukashev, M.F. Tamendarov, S.Z. Tokmoldin

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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