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Hydrogen Passivation of Impurity-Related Defects in Germanium
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Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies
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Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects
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Hydrogenation of GaAs during MBE Growth
p.1027

Identification of Microdefects Induced in Si after Hydrogen and Helium Plasma Treatments
p.1033

Isotope Studies of the Nature of IR-Active Center in c-Si:H(D)
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Thermal Stability of Acceptor-Hydrogen Pairs in Silicon
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Theory of Phosphorus-Hydrogen Complexes in Passivated Silicon
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Spontaneous Hydrogen Injection into Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Identification of Microdefects Induced in Si after...

Identification of Microdefects Induced in Si after Hydrogen and Helium Plasma Treatments

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1033-1038

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1033

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Online since:

January 1989

Authors:

M. Singh, Joerg Weber, T. Zundel, M. Konuma, Hans Cerva

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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