Paper Titles

Semiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in Silicon
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Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP
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Infrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium Phosphide
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Symmetries of Hydrogen-Associated Centers in Silicon
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Hydrogen Passivation of Impurity-Related Defects in Germanium
p.1009

Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies
p.1015

Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects
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Hydrogenation of GaAs during MBE Growth
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Identification of Microdefects Induced in Si after Hydrogen and Helium Plasma Treatments
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Hydrogen Passivation of Impurity-Related Defects...

Hydrogen Passivation of Impurity-Related Defects in Germanium

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1009-1014

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1009

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Online since:

January 1989

Authors:

Kenji Ito, Ch. Ban, Koichi Mizuno, T. Ito

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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