Paper Titles

Hydrogen Diffusion and Passivation of Shallow Impurities in Crystalline Silicon
p.979

Semiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in Silicon
p.985

Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP
p.991

Infrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium Phosphide
p.997

Symmetries of Hydrogen-Associated Centers in Silicon
p.1003

Hydrogen Passivation of Impurity-Related Defects in Germanium
p.1009

Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies
p.1015

Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects
p.1021

Hydrogenation of GaAs during MBE Growth
p.1027

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Symmetries of Hydrogen-Associated Centers in...

Symmetries of Hydrogen-Associated Centers in Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1003-1008

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1003

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Online since:

January 1989

Authors:

Brian Bech Nielsen, J. Olajos, Hermann G. Grimmeiss

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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