Paper Titles

Electronic Structure of Hydrogen and Shallow Acceptor Complexes in Silicon
p.973

Hydrogen Diffusion and Passivation of Shallow Impurities in Crystalline Silicon
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Semiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in Silicon
p.985

Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP
p.991

Infrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium Phosphide
p.997

Symmetries of Hydrogen-Associated Centers in Silicon
p.1003

Hydrogen Passivation of Impurity-Related Defects in Germanium
p.1009

Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies
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Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Infrared Study of the Passivation of Zinc...

Infrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium Phosphide

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

997-1002

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.997

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Online since:

January 1989

Authors:

B. Pajot, Jacques Chevallier, Bertrand Theys, B. Rose

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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