Paper Titles

The Electronic Structure of Isolated Atomic Hydrogen or Muonium in Si and GaAs
p.967

Electronic Structure of Hydrogen and Shallow Acceptor Complexes in Silicon
p.973

Hydrogen Diffusion and Passivation of Shallow Impurities in Crystalline Silicon
p.979

Semiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in Silicon
p.985

Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP
p.991

Infrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium Phosphide
p.997

Symmetries of Hydrogen-Associated Centers in Silicon
p.1003

Hydrogen Passivation of Impurity-Related Defects in Germanium
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Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Hydrogen Diffusion and Shallow Acceptor...

Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

991-996

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.991

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Online since:

January 1989

Authors:

Jérôme Chevalier, A. Jalil, Bertrand Theys, J.C. Pesant, M. Aucouturier, B. Rose, C. Kazmierski, A. Mircea

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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