Semiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in Silicon

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

985-990

DOI:

10.4028/www.scientific.net/MSF.38-41.985

Citation:

W. B. Fowler et al., "Semiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in Silicon", Materials Science Forum, Vols. 38-41, pp. 985-990, 1989

Online since:

January 1991

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$35.00

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