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Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Semiempirical Electronic-Structure Calculations of...

Semiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

985-990

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.985

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Online since:

January 1989

Authors:

W. Beall Fowler, Gary G. DeLeo, M.J. Dorogi

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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