Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

1021-1026

DOI:

10.4028/www.scientific.net/MSF.38-41.1021

Citation:

Y.-C. Du et al., "Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects", Materials Science Forum, Vols. 38-41, pp. 1021-1026, 1989

Online since:

January 1991

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