Paper Titles

Hydrogenation of GaAs during MBE Growth
p.1027

Identification of Microdefects Induced in Si after Hydrogen and Helium Plasma Treatments
p.1033

Isotope Studies of the Nature of IR-Active Center in c-Si:H(D)
p.1039

Thermal Stability of Acceptor-Hydrogen Pairs in Silicon
p.1045

Theory of Phosphorus-Hydrogen Complexes in Passivated Silicon
p.1051

Spontaneous Hydrogen Injection into Silicon
p.1057

Hydrogen Passivation of Donors and Acceptors in InP
p.1063

Two Electron D-State of DX-Centers
p.1067

The Deep Donor (DX Center) in GaAs: Determination of the Entropy Term in the Activation Energy
p.1073

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Theory of Phosphorus-Hydrogen Complexes in...

Theory of Phosphorus-Hydrogen Complexes in Passivated Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1051-1056

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1051

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Online since:

January 1989

Authors:

Aldo Amore Bonapasta, A. Lapiccirella, N. Tomassini, Mario Capizzi

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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