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Paper Titles
The Deep Donor (DX Center) in GaAs: Determination of the Entropy Term in the Activation Energy
p.1073
The Vacancy-Interstitial Model of DX Centers
p.1079
The Double-Faced DX Center in AlxGa1-xAs
p.1085
Long Lived Resonance States in Si-Doped AlGaAs
p.1091
Luminescence of Tellurium Related Deep Center in GaAs under Hydrostatic Pressure
p.1097
Pressure Dependence of the DX Center in Al0.35Ga0.65As:Te
p.1103
Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction
p.1109
Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy
p.1115
Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure
p.1121

Luminescence of Tellurium Related Deep Center in GaAs under Hydrostatic Pressure

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1097-1102

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1097

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Online since:

January 1989

Authors:

M. Zigone, P. Seguy, H. Roux-Buisson, G. Martinez

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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