Paper Titles

The Double-Faced DX Center in Al_xGa_1-xAs
p.1085

Long Lived Resonance States in Si-Doped AlGaAs
p.1091

Luminescence of Tellurium Related Deep Center in GaAs under Hydrostatic Pressure
p.1097

Pressure Dependence of the DX Center in Al_0.35Ga_0.65As:Te
p.1103

Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction
p.1109

Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy
p.1115

Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure
p.1121

Metastability of Antisite Defects in GaAs under Negative Electron Affinity
p.1125

Persistent Photoluminescence of DX-Centers in Ga_1-xAl_xAs:Si
p.1131

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Alloy Effects on Emission Rates for Deep Donors...

Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1109-1114

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1109

Citation:

Cite this paper

Online since:

January 1989

Authors:

Patricia M. Mooney, T.N. Theis, S.L. Wright

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: