Paper Titles

Pressure Dependence of the DX Center in Al_0.35Ga_0.65As:Te
p.1103

Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction
p.1109

Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy
p.1115

Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure
p.1121

Metastability of Antisite Defects in GaAs under Negative Electron Affinity
p.1125

Persistent Photoluminescence of DX-Centers in Ga_1-xAl_xAs:Si
p.1131

Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors
p.1137

Magnetic Circular Dichroism Study of Electron-Irradiation Induced Defects in InP
p.1145

The Fate of Frenkel Pairs in Silicon and Germanium: What Do we Know about it?
p.1151

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Metastability of Antisite Defects in GaAs under...

Metastability of Antisite Defects in GaAs under Negative Electron Affinity

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1125-1130

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1125

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Online since:

January 1989

Authors:

Nikolai T. Bagraev

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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