Paper Titles

Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction
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Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy
p.1115

Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure
p.1121

Metastability of Antisite Defects in GaAs under Negative Electron Affinity
p.1125

Persistent Photoluminescence of DX-Centers in Ga_1-xAl_xAs:Si
p.1131

Applications of Mössbauer Spectroscopy to Investigations of Defects in Semiconductors
p.1137

Magnetic Circular Dichroism Study of Electron-Irradiation Induced Defects in InP
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The Fate of Frenkel Pairs in Silicon and Germanium: What Do we Know about it?
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Positron Annihilation in Electron Irradiated Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Persistent Photoluminescence of DX-Centers in...

Persistent Photoluminescence of DX-Centers in Ga_1-xAl_xAs:Si

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1131-1136

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1131

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Online since:

January 1989

Authors:

W. Jantsch, G. Brunthaler, K. Ploog, J.E. Dmochowski, Jerzy M. Langer

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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