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Electron-Beam Epitaxy and Superdiffusion in Alloy Semiconductors by Electron-Beam Irradiation
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Positron Annihilation and Tem Study of Lattice Defects of Fusion Neutron Irradiated Silicon
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Neutrino-Recoil Experiments in Germanium
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Overlapping Deep Levels in Electron-Bombarded N-Type Silicon
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PAC-Study of Ternary Compound Formation by Ion Implantation
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Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
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Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR
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Fast Neutron Irradiation Induced Defects in High Purity Germanium
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Overlapping Deep Levels in Electron-Bombarded...

Overlapping Deep Levels in Electron-Bombarded N-Type Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1211-1216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1211

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Online since:

January 1989

Authors:

Bengt Gunnar Svensson, B.M.S. Larsson, K.-H. Rydén

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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