Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

1257-1264

DOI:

10.4028/www.scientific.net/MSF.38-41.1257

Citation:

P.J. McDonald et al., "Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors", Materials Science Forum, Vols. 38-41, pp. 1257-1264, 1989

Online since:

January 1991

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$35.00

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