Paper Titles

Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR
p.1227

Fast Neutron Irradiation Induced Defects in High Purity Germanium
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The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects
p.1239

Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and Al_xGa_1-xAs
p.1245

Defects in Silicon after Proton and Electron Irradiation
p.1251

Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors
p.1257

Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy
p.1265

A Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V Characteristics
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Transient Microwave Absorption Spectroscopy - Experimental Verification
p.1277

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Defects in Silicon after Proton and Electron...

Defects in Silicon after Proton and Electron Irradiation

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1251-1256

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1251

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Online since:

January 1989

Authors:

Doris Forkel-Wirth, S. Deubler, U. Reislöhner, K. Spörl, W. Witthuhn, Herbert Wolf

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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