Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGa1-xAs
p.1245
p.1245
Defects in Silicon after Proton and Electron Irradiation
p.1251
p.1251
Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors
p.1257
p.1257
Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy
p.1265
p.1265
A Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V Characteristics
p.1271
p.1271
Transient Microwave Absorption Spectroscopy - Experimental Verification
p.1277
p.1277
Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy
p.1283
p.1283
Photoluminescence and Optical Beam Induced Current Imaging of Defects
p.1289
p.1289
Investigation of Stacking Faults in Silicon by Induced Current Methods
p.1295
p.1295
A Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V Characteristics
Abstract:
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Periodical:
Materials Science Forum (Volumes 38-41)
Pages:
1271-1276
Citation:
Online since:
January 1989
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© 1989 Trans Tech Publications Ltd. All Rights Reserved
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