Paper Titles

A Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V Characteristics
p.1271

Transient Microwave Absorption Spectroscopy - Experimental Verification
p.1277

Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy
p.1283

Photoluminescence and Optical Beam Induced Current Imaging of Defects
p.1289

Investigation of Stacking Faults in Silicon by Induced Current Methods
p.1295

Characterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical Excitations
p.1301

Defect Alalysis in Semiconductors by Dechanneling
p.1307

Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography
p.1313

Temperature Dependence of Absorption Coefficient in Silicon of Lower Purity
p.1319

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Investigation of Stacking Faults in Silicon by...

Investigation of Stacking Faults in Silicon by Induced Current Methods

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1295-1300

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1295

Citation:

Cite this paper

Online since:

January 1989

Authors:

Antonio Castaldini, Anna Cavallini, Antonella Poggi, E. Susi

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: