Characterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical Excitations

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

1301-1306

DOI:

10.4028/www.scientific.net/MSF.38-41.1301

Citation:

F. Dubecky "Characterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical Excitations", Materials Science Forum, Vols. 38-41, pp. 1301-1306, 1989

Online since:

January 1991

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