Paper Titles

Transient Microwave Absorption Spectroscopy - Experimental Verification
p.1277

Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy
p.1283

Photoluminescence and Optical Beam Induced Current Imaging of Defects
p.1289

Investigation of Stacking Faults in Silicon by Induced Current Methods
p.1295

Characterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical Excitations
p.1301

Defect Alalysis in Semiconductors by Dechanneling
p.1307

Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography
p.1313

Temperature Dependence of Absorption Coefficient in Silicon of Lower Purity
p.1319

Developement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon Bicrystal
p.1325

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Characterization of Deep Defects in...

Characterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical Excitations

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1301-1306

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1301

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Online since:

January 1989

Authors:

F. Dubecky

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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