Paper Titles

Characterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical Excitations
p.1301

Defect Alalysis in Semiconductors by Dechanneling
p.1307

Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography
p.1313

Temperature Dependence of Absorption Coefficient in Silicon of Lower Purity
p.1319

Developement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon Bicrystal
p.1325

Defect Analysis in SiO₂/Si Structures by Electron Tunneling
p.1331

Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence Spectroscopy
p.1337

Crystal Defect Study in III-V Compound Technology
p.1345

Multiphonon Recombination in Semiconductors
p.1351

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Developement of a Scanning Minority Carrier...

Developement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon Bicrystal

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1325-1330

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1325

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Online since:

January 1989

Authors:

T. Heiser, A. Mesli, P. Siffert

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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