Paper Titles

Developement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon Bicrystal
p.1325

Defect Analysis in SiO₂/Si Structures by Electron Tunneling
p.1331

Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence Spectroscopy
p.1337

Crystal Defect Study in III-V Compound Technology
p.1345

Multiphonon Recombination in Semiconductors
p.1351

Two-Electron Capture in Semiconductors with Deep Defects
p.1361

Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs
p.1367

Metastability of Electrical Properties of Dislocations in Silicon
p.1373

On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs
p.1379

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Multiphonon Recombination in Semiconductors

Multiphonon Recombination in Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1351-1360

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1351

Citation:

Cite this paper

Online since:

January 1989

Authors:

I.N. Yassievich

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: