Paper Titles

Crystal Defect Study in III-V Compound Technology
p.1345

Multiphonon Recombination in Semiconductors
p.1351

Two-Electron Capture in Semiconductors with Deep Defects
p.1361

Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs
p.1367

Metastability of Electrical Properties of Dislocations in Silicon
p.1373

On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs
p.1379

Effect of Impurities on Dislocation Activity in GaAs
p.1385

Magneto-Optics of Excitons Bound to Dislocations in CdS
p.1391

Deep Level Studies in GaAs-Ga_0.5Al_0.5As Superlattices Grown by MOCVD
p.1397

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Metastability of Electrical Properties of...

Metastability of Electrical Properties of Dislocations in Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1373-1378

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1373

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Online since:

January 1989

Authors:

Olga V. Feklisova, Eugene B. Yakimov, Nikolai Yarykin

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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