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Paper Titles
Two-Electron Capture in Semiconductors with Deep Defects
p.1361
Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs
p.1367
Metastability of Electrical Properties of Dislocations in Silicon
p.1373
On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs
p.1379
Effect of Impurities on Dislocation Activity in GaAs
p.1385
Magneto-Optics of Excitons Bound to Dislocations in CdS
p.1391
Deep Level Studies in GaAs-Ga0.5Al0.5As Superlattices Grown by MOCVD
p.1397
Manganese Levels in GaAs under Hydrostatic Pressure, in AlGaAs, and in GaAs/AlGaAs Quantum Wells - A Comparative Study
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Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes
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Effect of Impurities on Dislocation Activity in GaAs

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1385-1390

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1385

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Online since:

January 1989

Authors:

Ichiro Yonenaga, Koji Sumino

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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