Paper Titles

Multiphonon Recombination in Semiconductors
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Two-Electron Capture in Semiconductors with Deep Defects
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Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs
p.1367

Metastability of Electrical Properties of Dislocations in Silicon
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On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs
p.1379

Effect of Impurities on Dislocation Activity in GaAs
p.1385

Magneto-Optics of Excitons Bound to Dislocations in CdS
p.1391

Deep Level Studies in GaAs-Ga_0.5Al_0.5As Superlattices Grown by MOCVD
p.1397

Manganese Levels in GaAs under Hydrostatic Pressure, in AlGaAs, and in GaAs/AlGaAs Quantum Wells - A Comparative Study
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41On the Nature of the Impurity Atmosphere around...

On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1379-1384

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1379

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Online since:

January 1989

Authors:

Cesare Frigeri

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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