Paper Titles

On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs
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Effect of Impurities on Dislocation Activity in GaAs
p.1385

Magneto-Optics of Excitons Bound to Dislocations in CdS
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Deep Level Studies in GaAs-Ga_0.5Al_0.5As Superlattices Grown by MOCVD
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Manganese Levels in GaAs under Hydrostatic Pressure, in AlGaAs, and in GaAs/AlGaAs Quantum Wells - A Comparative Study
p.1403

Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes
p.1409

Screening Effects and Density of States of Shallow Impurities in GaAs-(Ga,Al)As Quantum-Well Wires
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Transient Spectroscopy on Individual Defect Levels
p.1421

Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Manganese Levels in GaAs under Hydrostatic...

Manganese Levels in GaAs under Hydrostatic Pressure, in AlGaAs, and in GaAs/AlGaAs Quantum Wells - A Comparative Study

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1403-1408

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1403

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Online since:

January 1989

Authors:

F. Bantien, G.L. Hofman, K. Reimann, Joerg Weber

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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