Paper Titles

Metastability of Electrical Properties of Dislocations in Silicon
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On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs
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Effect of Impurities on Dislocation Activity in GaAs
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Magneto-Optics of Excitons Bound to Dislocations in CdS
p.1391

Deep Level Studies in GaAs-Ga_0.5Al_0.5As Superlattices Grown by MOCVD
p.1397

Manganese Levels in GaAs under Hydrostatic Pressure, in AlGaAs, and in GaAs/AlGaAs Quantum Wells - A Comparative Study
p.1403

Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes
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Screening Effects and Density of States of Shallow Impurities in GaAs-(Ga,Al)As Quantum-Well Wires
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Transient Spectroscopy on Individual Defect Levels
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Deep Level Studies in GaAs-Ga0.5Al0.5As...

Deep Level Studies in GaAs-Ga_0.5Al_0.5As Superlattices Grown by MOCVD

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1397-1402

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1397

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Online since:

January 1989

Authors:

S. Ababou, G. Bremond, P. Roura, L. Mayet, Gérard Guillot, J.J. Coleman

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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