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Deep Level Studies in GaAs-Ga_0.5Al_0.5As Superlattices Grown by MOCVD
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Screening Effects and Density of States of Shallow Impurities in GaAs-(Ga,Al)As Quantum-Well Wires
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Transient Spectroscopy on Individual Defect Levels
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Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface
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Photoluminescence and Transmision Electron Microscopy of Defects in SiC Grown on Si
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Transient Spectroscopy on Individual Defect Levels

Transient Spectroscopy on Individual Defect Levels

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1421-1426

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1421

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Online since:

January 1989

Authors:

A. Karwath, M. Schulz

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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