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Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes
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Screening Effects and Density of States of Shallow Impurities in GaAs-(Ga,Al)As Quantum-Well Wires
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Transient Spectroscopy on Individual Defect Levels
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Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface
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Photoluminescence and Transmision Electron Microscopy of Defects in SiC Grown on Si
p.1433

Deep Levels in GaAs Mesfets
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Defects in MOS Technologies
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Lattice Deformation and Defect Structure of GaAs/Native Oxide Interfaces
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Influence of the Surface Layer Defects on the Conduction Mechanism in Semi-Insulating Gallium Arsenide
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Photoluminescence and Transmision Electron...

Photoluminescence and Transmision Electron Microscopy of Defects in SiC Grown on Si

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1433-1438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1433

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Online since:

January 1989

Authors:

Wolfgang J. Choyke, J. Anthony Powell, T.T. Cheng, P. Pirouz

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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