Paper Titles

Defect Analysis in SiO₂/Si Structures by Electron Tunneling
p.1331

Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence Spectroscopy
p.1337

Crystal Defect Study in III-V Compound Technology
p.1345

Multiphonon Recombination in Semiconductors
p.1351

Two-Electron Capture in Semiconductors with Deep Defects
p.1361

Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs
p.1367

Metastability of Electrical Properties of Dislocations in Silicon
p.1373

On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs
p.1379

Effect of Impurities on Dislocation Activity in GaAs
p.1385

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Two-Electron Capture in Semiconductors with Deep...

Two-Electron Capture in Semiconductors with Deep Defects

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1361-1366

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1361

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Online since:

January 1989

Authors:

Nikolai T. Bagraev, N.M. Kolchanova, V.A. Mashkov, Igor S. Polovtsev

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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