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Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence Spectroscopy
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Crystal Defect Study in III-V Compound Technology
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Multiphonon Recombination in Semiconductors
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Two-Electron Capture in Semiconductors with Deep Defects
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Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs
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Metastability of Electrical Properties of Dislocations in Silicon
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On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs
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Effect of Impurities on Dislocation Activity in GaAs
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Magneto-Optics of Excitons Bound to Dislocations in CdS
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Influence of Dislocations on Galvanomagnetic and...

Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1367-1372

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1367

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Online since:

January 1989

Authors:

J.-L. Farvacque, D. Vignaud, D. Ferré, E. Depraetère

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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