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Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography
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Temperature Dependence of Absorption Coefficient in Silicon of Lower Purity
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Developement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon Bicrystal
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Defect Analysis in SiO₂/Si Structures by Electron Tunneling
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Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence Spectroscopy
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Crystal Defect Study in III-V Compound Technology
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Multiphonon Recombination in Semiconductors
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Two-Electron Capture in Semiconductors with Deep Defects
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Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Defect and Impurity Studies in III-V Quantum Wells...

Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence Spectroscopy

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1337-1344

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1337

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Online since:

January 1989

Authors:

B. Hamilton, G. Clarke

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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