Paper Titles

Defect Alalysis in Semiconductors by Dechanneling
p.1307

Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography
p.1313

Temperature Dependence of Absorption Coefficient in Silicon of Lower Purity
p.1319

Developement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon Bicrystal
p.1325

Defect Analysis in SiO₂/Si Structures by Electron Tunneling
p.1331

Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence Spectroscopy
p.1337

Crystal Defect Study in III-V Compound Technology
p.1345

Multiphonon Recombination in Semiconductors
p.1351

Two-Electron Capture in Semiconductors with Deep Defects
p.1361

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Defect Analysis in SiO2/Si Structures by Electron...

Defect Analysis in SiO₂/Si Structures by Electron Tunneling

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1331-1336

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1331

Citation:

Cite this paper

Online since:

January 1989

Authors:

H. Köster, M. Schmid

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: