Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

1313-1318

DOI:

10.4028/www.scientific.net/MSF.38-41.1313

Citation:

E.K. Pal et al., "Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography", Materials Science Forum, Vols. 38-41, pp. 1313-1318, 1989

Online since:

January 1991

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