Paper Titles

Photoluminescence and Optical Beam Induced Current Imaging of Defects
p.1289

Investigation of Stacking Faults in Silicon by Induced Current Methods
p.1295

Characterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical Excitations
p.1301

Defect Alalysis in Semiconductors by Dechanneling
p.1307

Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography
p.1313

Temperature Dependence of Absorption Coefficient in Silicon of Lower Purity
p.1319

Developement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon Bicrystal
p.1325

Defect Analysis in SiO₂/Si Structures by Electron Tunneling
p.1331

Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence Spectroscopy
p.1337

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Study of the Defect Depth Distribution in Heat...

Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1313-1318

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1313

Citation:

Cite this paper

Online since:

January 1989

Authors:

E.K. Pal, Erzsébet Hild, T. Kormàny, S. Nouredin

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: