Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

1283-1288

DOI:

10.4028/www.scientific.net/MSF.38-41.1283

Citation:

K. Sakai and T. Ogawa, "Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy", Materials Science Forum, Vols. 38-41, pp. 1283-1288, 1989

Online since:

January 1991

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