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Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors
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Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy
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A Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V Characteristics
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Transient Microwave Absorption Spectroscopy - Experimental Verification
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Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy
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Photoluminescence and Optical Beam Induced Current Imaging of Defects
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Investigation of Stacking Faults in Silicon by Induced Current Methods
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Characterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical Excitations
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Defect Alalysis in Semiconductors by Dechanneling
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Study on the Dislocation Lines in Indium Doped...

Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1283-1288

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1283

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Online since:

January 1989

Authors:

Kazufumi Sakai, Tomoya Ogawa

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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