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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41

Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

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Table of Contents

Paper Title Page

Fast Neutron Irradiation Induced Defects in High Purity Germanium

Authors: N. Fourches, A. Huck, G. Walter, J.C. Bourgoin

1233

The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects

Authors: V.D. Akhmetov, V.V. Bolotov, G.N. Kamayev, L.S. Smirnov

1239

Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and Al_xGa_1-xAs

Authors: G. Langouche, H. Bemelmans, J. Odeurs, G. Borghs, M. de Potter, W. Deraedt, M. Van Rossum

1245

Defects in Silicon after Proton and Electron Irradiation

Authors: Doris Forkel-Wirth, S. Deubler, U. Reislöhner, K. Spörl, W. Witthuhn, Herbert Wolf

1251

Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors

Authors: P.J. McDonald, E.P. O'Reilly, A. Habanyama

1257

Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy

Authors: Toshinobu Sugiyama, Yukari Ishikawa, Katsumi Tanimura, Yoshikazu Hayashi, Noriaki Itoh

1265

A Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V Characteristics

Authors: Zsolt E. Horváth

1271

Transient Microwave Absorption Spectroscopy - Experimental Verification

Authors: J. Wöckinger, W. Jantsch, G. Ferenczi

1277

Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy

Authors: Kazufumi Sakai, Tomoya Ogawa

1283

Photoluminescence and Optical Beam Induced Current Imaging of Defects

Authors: P.D. Pester, Thomas A. Wilson

1289