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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41

Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

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Table of Contents

Paper Title Page

Spontaneous Hydrogen Injection into Silicon

Authors: A.E. Jaworowski

1057

Hydrogen Passivation of Donors and Acceptors in InP

Authors: E.M. Omeljanovsky, A.V. Pakhomov, A.Y. Polyakov

1063

Two Electron D-State of DX-Centers

Authors: K. Khachaturyan, Eicke R. Weber, Maria Kaminska

1067

The Deep Donor (DX Center) in GaAs: Determination of the Entropy Term in the Activation Energy

Authors: T.N. Theis, T.N. Morgan, B.D. Parker, S.L. Wright

1073

The Vacancy-Interstitial Model of DX Centers

Authors: T.N. Morgan

1079

The Double-Faced DX Center in Al_xGa_1-xAs

Authors: J.C.M. Henning, E.A. Montie, J.P.M. Ansems

1085

Long Lived Resonance States in Si-Doped AlGaAs

Authors: Harold P. Hjalmarson, T.J. Drummond

1091

Luminescence of Tellurium Related Deep Center in GaAs under Hydrostatic Pressure

Authors: M. Zigone, P. Seguy, H. Roux-Buisson, G. Martinez

1097

Pressure Dependence of the DX Center in Al_0.35Ga_0.65As:Te

Authors: Ming Fu Li, W. Shan, P.Y. Yu, W.L. Hansen, Eicke R. Weber, E. Bauser

1103

Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction

Authors: Patricia M. Mooney, T.N. Theis, S.L. Wright

1109