Paper Titles

Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps
p.803

Optically Anisotropic Deep Luminescent Centers in GaAs
p.809

Raman Spectroscopic Study of Si Local Vibrational Modes in GaAs
p.815

Deep Donor-Acceptor Pair Recombination in Bulk GaP Studied by ODMR and DLTS Techniques
p.821

High Resolution Measurements of the ³A₂ - ³T₂ Absorption Spectrum in V-Doped GaAs
p.827

Group-IV Impurity Related Centers in GaAs
p.833

The Effect of Deep Electron Traps on Luminescent Properties of VPE Te-Doped GaAs_0.62P_0.38 Epitaxial Layers
p.839

Solubility of the Native Deep-Level Defect Typical of LPE-Grown AlGaAs
p.845

Reduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:Si
p.851

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41High Resolution Measurements of the 3A2 - 3T2...

High Resolution Measurements of the ³A₂ - ³T₂ Absorption Spectrum in V-Doped GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

827-832

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.827

Citation:

Cite this paper

Online since:

January 1989

Authors:

Andrzej Wysmolek, Z. Liro, A.M. Hennel

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: